bav99-v document number 85718 rev. 1.8, 12-aug-10 vishay semiconductors www.vishay.com 1 1 8 109 12 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com small signal switching diode, dual features ? fast switching speed ? high conductance ? surface mount package ideally suited for automatic insertion ? connected in series ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec mechanical data case: sot-23 weight: approx. 8.8 mg packaging codes/options: gs18 / 10 k per 13" reel (8 mm tape), 10 k/box gs08 / 3 k per 7" reel (8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified part ordering code marking remarks bav99-v bav99-v-gs18 or bav99-v-gs08 je tape and reel parameter test condition symbol value unit non repetitive peak reverse voltage v rm 100 v repetitive peak reverse voltage = working peak reverse voltage = dc blocking voltage v rrm = v rwm = v r 70 v peak forward surge current t p = 1s i fsm 1a t p = 1 s i fsm 4.5 a average forward current half wave rectification with resistive load and f 50 mhz, on ceramic substrate 10 mm x 8 mm x 0.7 mm i fav 150 ma forward current on ceramic substrate 10 mm x 8 mm x 0.7 mm i f 250 ma power dissipation on ceramic substrate 10 mm x 8 mm x 0.7 mm p tot 300 mw
www.vishay.com 2 bav99-v vishay semiconductors document number 85718 rev. 1.8, 12-aug-10 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit junction ambient on ceramic substrate 10 mm x 8 mm x 0.7 mm r thja 430 k/w junction and storage temperature range t j = t stg - 55 to + 150 c parameter test condition symbol min. ty p. max. unit forward voltage i f = 1 ma v f 715 mv i f = 10 ma v f 855 mv i f = 50 ma v f 1v i f = 150 ma v f 1.25 v reverse current v r = 70 v i r 2.5 a v r = 70 v, t j = 150 c i r 50 a v r = 25 v, t j = 150 c i r 30 a diode capacitance v r = 0, f = 1 mhz c d 1.5 pf reverse recovery time i f = 10 ma to i r = 1 ma, v r = 6 v, r l = 100 t rr 6ns figure 1. forward current vs. forward voltage i - for w ard c u rrent (ma) 0.01 0.1 1 10 100 1000 0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 1.6 1. 8 2.0 v f - for w ard v oltage ( v ) 14356 f t j = 100 c 25 c figure 2. peak forward current i fm = f (t p ) 22290
bav99-v document number 85718 rev. 1.8, 12-aug-10 vishay semiconductors www.vishay.com 3 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com layout for r thja test thickness: fiberglass 1.5 mm (0.059 in.) copper leads 0.3 mm (0.012 in.) package dimensions in millimeters (inches): sot-23 17451 15 (0.59) 12 (0.47) 0. 8 (0.03) 5 (0.2) 7.5 (0.3) 3 (0.12) 1 (0.4) 1 (0.4) 2 (0. 8 ) 2 (0. 8 ) 1.5 (0.06) 5.1 (0.2) foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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